BAT85S vishay semiconductors 1 (4) rev. 4, 12-feb-01 www.vishay.com document number 85513 small signal schottky barrier diode features integrated protection ring against static discharge very low forward voltage applications applications where a very low forward voltage is required 94 9367 order instruction type type differentiation ordering code remarks BAT85S v =30v BAT85Stap ammopack BAT85S v r = 30 v BAT85Str tape and reel absolute maximum ratings t j = 25 c parameter test conditions type symbol value unit reverse voltage v r 30 v peak forward surge current t p 10 ms i fsm 5 a repetitive peak forward current t p 1s i frm 300 ma forward current i f 200 ma average forward current pcb mounting, l=4 mm; v rwm =25 v, t amb =50 c i fav 200 ma junction temperature t j 125 c storage temperature range t stg 65...+150 c maximum thermal resistance t j = 25 c parameter test conditions symbol value unit junction ambient l=4 mm, t l =constant r thja 350 k/w
BAT85S vishay semiconductors 2 (4) rev. 4, 12-feb-01 www.vishay.com document number 85513 electrical characteristics t j = 25 c parameter test conditions type symbol min typ max unit i f =0.1ma v f 240 mv i f =1ma v f 320 mv forward voltage i f =10ma v f 400 mv g i f =30ma v f 500 mv i f =100ma v f 800 mv reverse current v r =25 v i r 2 a diode capacitance v r =1 v, f=1mhz c d 10 pf characteristics (t j = 25 c unless otherwise specified) 0 20 40 60 80 100 120 140 160 180 200 25 50 75 100 125 150 t j junction temperature ( 5 c ) 15822 v r = 30 v p reverse power dissipation ( mw ) r 540k/w p r limit @100%v r p r limit @80%v r r thja = figure 1. max. reverse power dissipation vs. junction temperature 1 10 100 1000 25 50 75 100 125 150 1 10 100 1000 25 50 75 100 125 150 t j junction temperature ( 5 c ) 15823 v r = v rrm i reverse current ( a ) r figure 2. reverse current vs. junction temperature 0 0.5 1.0 1.5 i forward current ( a ) v f forward voltage ( v ) 15824 f t j =25 5 c t j = 150 5 c 0.1 1 10 100 1000 figure 3. forward current vs. forward voltage 0 1 2 3 4 5 6 7 8 9 10 0.1 1.0 10.0 100.0 v r reverse voltage ( v ) 15825 c diode capacitance ( pf ) d f=1mhz figure 4. diode capacitance vs. reverse voltage
BAT85S vishay semiconductors 3 (4) rev. 4, 12-feb-01 www.vishay.com document number 85513 dimensions in mm cathode identification j 1.7 max. j 0.55 max. 3.9 max. 26 min. technical drawings according to din specifications 94 9366 standard glass case 54 a 2 din 41880 jedec do 35 weight max. 0.3 g 26 min.
BAT85S vishay semiconductors 4 (4) rev. 4, 12-feb-01 www.vishay.com document number 85513 ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( odss ). the montreal protocol ( 1987 ) and its london amendments ( 1990 ) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2 . class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency ( epa ) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c ( transitional substances ) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use visha semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 ( 0 ) 7131 67 2831, fax number: 49 ( 0 ) 7131 67 2423
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